Optical Bistability in Monolithic Two-sectioned InAs/InP Quantum-dash Laser

Observation of optical bistability in a two-section InAs/InP quantum dash laser is reported. The hysteresis in the optical power-injection current (L-I) characteristics is found to vary with the absorber reverse bias condition. A reverse bias of −0.8 (0) V to the saturable absorber, a hysteresis of 32 (24) mW is measured when the injection current through the gain section is swept forward and backward. Moreover, the bistability is further affirmed through investigation of the lasing emission spectra at specific operating points.