Old Web
English
Sign In
Acemap
>
Paper
>
Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
2021
Sadia Muniza Faraz
Syed Riaz un Nabi Jafri
Hashim Raza Khan
Wakeel Shah
Naveed ul Hassan Alvi
Qamar-ul-Wahab
Omer Nur
Keywords:
heterojunction diode
Annealing (metallurgy)
Nanorod
Interface (computing)
Materials science
state density
Optoelectronics
Heterojunction
Correction
Source
Cite
Save
Machine Reading By IdeaReader
51
References
0
Citations
NaN
KQI
[]