Characterization of MBE-grown 1.55-µm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

GaSb-based multiple-quantum-well lasers with In 0.2 Ga 0.8 Sb wells, Al 0.35 Ga 0.65 Sb barriers, and Al 0.9 Ga 0.1 Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.