Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si

III-V nanowire (NW)-channel FETs on Si are exceedingly investigated because they are promising alternative channels for fast n-channel FETs. We have reported InGaAs NW-channel and modulation doping technique by using core-shell structure for the vertical gate-all-around FETs (VGAA-FETs) on Si. However, device scalability of the NWs for the VGAA-FETs on Si have been less investigated. Here, we characterized several scaling effects on the III-V NW-channel VGAA-FETs on Si.