Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT)

Abstract : A quantum-design approach to reduce the Auger losses in wavelength=2-micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6X lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7X and represents about a 19-fold reduction in the equivalent ?Auger coefficient.?