Low Gain Avalanche Detectors with Time Resolution better than 35ps Developed by IHEP and IME for ATLAS HGTD project

This paper will show the simulation and testing results of 50{\mu}m thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Micro Electronics (IME) of Chinese Academy of Sciences. Testing results show that the IHEP-IME sensors with higher dose for gain layer have lower breakdown voltages and higher gain layer voltage for capacitance-voltage properties, which are consistent with the TCAD simulation results. Beta testing results show that the time resolution of IHEP-IME sensors are better than 35ps and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for ATLAS HGTD project.