0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMIC

This paper demonstrates the low-power operation of an InP HEMT V-band low-noise amplifier (LNA) MMIC. The device used here is a commercial 0.1-mum InP HEMT developed for high-speed digital ICs. The fabricated two-stage LNA MMIC, chip size of 0.9 mm 2 , employs two 50-mum gate-width InP HEMTs and coplanar waveguides. Under 0.4 V supply voltage operation, the MMIC achieves a noise figure of 2.86 dB at 60 GHz with an associated gain of 12.3 dB. The power dissipation of the MMIC was only 5.6 mW. The input IP3 was - 9 dBm at 60 GHz. A 3-dB bandwidth of 44.6 GHz to 67.2 GHz was also achieved. These results indicate the InP HEMT technology has a great potential for the low-voltage and low-power ICs that are needed for future millimeter-wave high-speed wireless applications