Dielectric Properties of Coronene Film Deposited onto Silicon Substrate by Spin Coating for Optoelectronic Applications

To determine the electrical modulus, dielectric properties, and ac conductivity of Coronene semiconductor layer, we have produced Al/Coronene/n-Si structure by using the thermally evaporation and spin coating method. The variation of dielectric constant (e′), dielectric imaginary part (e″), tangent loss (tanδ), electrical modulus (M′ and M″), and ac electrical conductivity (σac) with voltage and frequency of Coronene semiconductor layer have been investigated in the frequency range of 1 kHz – 1 MHz and at the selected voltages (0.0–0.4 V with steps 0.02 V). It is found that thee′ande″values decrease with increasing frequency while an increase is observed in tanδ, σac, and the real (M′) and the imaginary (M″) of the electrical modulus. The e′, e″, tanδ, σac, M′, and M″ values have been determined as 6.53, 8.58, 1.31, 0.0477 S/cm, 0.0561 and 0.0477 for 1 kHz and 0.0046, 0.129, 2.78, 7.17 S/cm, 0.278, and 7.74 for 1 MHz at 0.0 V, respectively.