Porous Silicon Preparation by Electrochemical Etching in Ionic Liquids
2020
Anodic etching of n-type {111} silicon in ionic liquid (IL) systems ([RMIM][X], R = H, Bu; X = BF4–, PF6–), realized under galvanostatic conditions and at room temperature, allowed the formation of...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
6
Citations
NaN
KQI