Impact of SET and RESET conditions on CBRAM high temperature data retention

In this paper, we investigate the high temperature behavior of oxide-based conductive bridge memories. A methodology to optimize both high and low resistance states stability is presented. A numerical model is developed able to simulate the filament dissolution over time. This allows us to establish a clear correlation between the filament morphology and the ON/OFF states stability. It is shown that the optimization of the memory programming conditions leads to a stable memory window up to 250°C.