1-mm gate periphery AlGaN/AlN/GaN HEMTs on sic with output power of 9.39 W at 8 GHz
2007
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Nanjing Electon Device Inst, Nanjing 210016, Peoples R China
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
19
Citations
NaN
KQI