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SBT膜と新構造スタックセルを用いた4Mb FeRAM(デバイス/回路動作 : 強誘電体薄膜とデバイス応用)
SBT膜と新構造スタックセルを用いた4Mb FeRAM(デバイス/回路動作 : 強誘電体薄膜とデバイス応用)
2003
takanao hayasi
yasufumi igarasi
daisuke inomata
taka zi iti mori
tosirou mituhasi
kinya asikaga
tosio itou
masaki yosimaru
masaya nagata
syun otearai
hironori noti dai in
tutomu nagahama
tiharu isobe
hiroyuki moriya
kouzi syouzi
yasuyuki itou
hideaki kuroda
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Keywords:
Artificial intelligence
Machine learning
Computer science
Theoretical computer science
Ferroelectric RAM
Computer architecture
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