Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

In order to develop III–V based devices integrated directly above post-processed silicon wafers, low temperature diffusion of zinc in n-type InP and InGaAs is studied at compatible temperatures, below 425 oC. We particularly focus on the resulting surface degradation. Efficient Zn diffusion is obtained for InGaAs samples, where the surface remains mirror-like after thermal treatment. Conversely, no significant diffusion occurs in InP where the surface is deeply deteriorated. The stability study for InP under thermal annealing in various ambients allows us to rule out thermal dephosphorization as the main cause of the surface degradation. On the basis of experimental observations and thermodynamic considerations, it is suggested that InP degradation is linked to the direct interaction of Zn and P, inducing the formation of parasitic Zn x P2 alloys, which also hinders the efficient diffusion of Zn into the InP substrate.