Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4 H –SiC

Color centers in silicon carbide (SiC) are promising candidates for quantum technologies. However, the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging. In this study, helium ion-implanted 4H–SiC was characterized by atomic force microscopy (AFM), confocal photoluminescence (PL), and confocal Raman spectroscopy at room temperature. PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping. Lattice defects (C–C bond) were detected by continuous laser excitation at 532 nm and 638 nm, respectively. PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects. Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup, helium bubbles, as well as swelling.