Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs

We examined the issue of reliability of InP-based high-electron mobility transistors (HEMTs), focusing on the increase of drain resistance R d . In investigations of the mechanism of R d increase, we took note of contaminant incorporation and of the relations between the device lifetime and the strength of the channel electric field. In the fabrication process, reducing contaminants, especially fluorine, significantly suppressed the increase of source and drain resistances. Cross-sectional views of the gate of improved devices, which had a long lifetime, confirmed an almost contaminant-free surface around the gate. In acceleration tests, the most negative impact on drain resistance stability among several bias conditions was found when the current density was high and the channel electric field was large at the same time. The dependence of drain-gate electric field strength E showed that the device lifetimes of HEMTs determined from R d increase obeyed exp(1/E), which means that impact ionization was the main cause of degradation. We elucidate that the interactions of hot carriers with contaminants around the gate are the main causes of the R d increase in HEMTs. Suppression of device degradation was achieved by optimizing the fabrication process around the gate. In this way, device lifetime was remarkably enhanced.