Fabrication of organic thin film transistors for application in flexible sensors

In this study, pentacene based organic thin film transistors were fabricated with PVP and high dielectric constant (k) PVP/TiO2 nanocomposite as the gate dielectric. The PVP/TiO2 nanocomposite dielectric layer consists of poly-4-vinylpheno l(PVP) cross linked with poly(melamine-co-formaldehyde) and high-k TiO2 nanoparticles. The structure, morphology and dielectric properties of the samples were analyzed. Also, the electrical characteristics of organic transistors with PVP dielectric was compared with PVP/TiO2 dielectric.