COMPARACIÓN DE CUATRO MÉTODOS DE EXTRACCIÓN DE PARÁMETROS PARA TRANSISTORES MOSFET

Four MOSFET parameter extraction methods are evaluated and scrutinized. These methods, which are able to separate the effects of drain-to-source series resistance and mobility degradation factor, are based on direct and indirect fitting of the bidimensional measurements ID(VG,VD) of MOSFETs under strong inversion condition. The procedures also extract the conduction parameter, K, and the bulk charge effect parameters, α. The methods are tested with measured and simulated data for various channel lengths. The comparison is made in terms of computational efficiency and physical meaning.