Spin splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

The spin-resolved quantum Hall effect is observed in the magnetotransport data of strongly disordered GaAs layers with low electron mobility $\ensuremath{\mu}\ensuremath{\approx}2000\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.2em}{0ex}}\mathrm{s}$, in spite of the fact that the spin-splitting energy is much smaller than the level broadening. Experimental results are explained in the frame of scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.