Efficient Luminescence from GaAs Nanocrystals in SiO 2 Matrices

We have fabricated zincblende GaAs nanocrystals by means of Ga + and As + coimplantation into SiO 2 matrices. A broad photoluminescence band is observed in the visible spectral region. Under selective excitation at energies within the visible luminescence band, GaAs-related phonon structures are observed at low temperatures. The photoluminescence mechanism in GaA/SiO 2 nanocomposites is discussed.