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Design of Ka-band broadband low-noise amplifier using 100nm gate-length GaN on silicon technology
Design of Ka-band broadband low-noise amplifier using 100nm gate-length GaN on silicon technology
2021
Zou Yu
Chen Zhijian
Lai Junkai
Li Bin
Zhaohui Wu
Xiao-Ling Lin
Keywords:
Low-noise amplifier
Materials science
Ka band
gate length
Silicon
Optoelectronics
Broadband
Correction
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