A 24.3Me − Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

This paper presents a $16\mu\mathrm{m}$ pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of $95\text{ke}^{-}/\mu \mathrm{m}^{2}$ and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on $\mathrm{a}\sim 10^{12}\text{cm}^{-3}$ p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.