Techniques for electron-beam fabrication of 0.5 /spl mu/m linewidth masks using AZ1350 positive photoresist

Techniques are described in detail for fabrication of 0.5 /spl mu/m-linewidth masks on an electron-beam (e-beam) exposure system using chrome blanks coated with commercial AZ1350 positive photoresist. The proximity effects occurring during e-beam exposure are theoretically analyzed. Data compensation for e-beam forward scattering and suppression of e-beam back scattering by using a low-sensitivity photoresist have been employed to eliminate the influence of the proximity effects on the critical dimensions (CD) in e-beam exposure of submicron patterns. Masks with 0.5/spl plusmn/0.1 /spl mu/m linewidth have been successfully fabricated. Spray development and plasma etching of the chrome film were used in the processing. The reasons for and advantages of using AZ1350 positive photoresist are briefly discussed.