A Feasible Heterostructure of P(VDF-TrFE)/Semiconductor for a Stable Multi-State Memory

Abstract Ferroelectric random-access memory is widely concerned because of its nearly infinite writing cycles and fast reading and writing ability. Since ferroelectric memory is not as dense as dynamic random-access memory and static random-access memory, which cannot store so much data in the same space, it is difficult to replace these technologies in practical applications. One possible solution to this dilemma is to increase the storage capacity per memory cell. This work uses a feasible capacitor structure of P(VDF-TrFE)/organic semiconductor heterostructure to improve the storage capacity. Both ferroelectric layer and semiconductor layer are prepared using a simple spin coating method. Due to the intervention of semiconductor, three polarization states are demonstrated owing to the splitting of a displacement current peak, where the semiconductor-dielectric transformation of the semiconductor layer plays an important role. The measurement of electrical properties shows that the ferroelectric thin film about this structure with three polarization states can be used to represent the storage 0, 1, 2, and the polarization of P1, P2, P3 are 0, 3.4 and 9.2 μC cm-2, respectively. According to the fitting results, the data retention capacity of this structure is excellent, that the residual polarizations of P1, P2 and P3 are 0, 3.2 and 9.2 μC cm-2 over 3 months, respectively.