Implanted silicon detector telescope: New developments

1998 
Abstract As a result of a collaboration between SGS-Thomson and INFN, a Monolithic Silicon Detector Telescope with Δ E / E of 4×4 mm 2 with an ultra-thin Δ E stage (1 μm) has been recently presented as a tool to identify low-energy heavy ions. The good performances obtained in the charge identification are anyway limited by the relatively small active area. We report on two new larger area Δ E / E telescopes. The first one, a five strip detector with each Δ E strip 3×4 mm 2 and a common E stage, has given on-beam good results. The second one, a 20×20 mm 2 active area, is under test and is limited by the high capacitance of the Δ E stage (40 nF) requiring a suitable front-end electronics, presented in a different communication.
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