Doppler broadening spectroscopy studies of CoSi2 films

Doppler Broadening Spectroscopy (DBS) has been employed to study the growth of Co silicide films. Depth-profiled DBS confirms the conclusion from an earlier reemitted positron study that the short positron diffusion length in these films is primarily due to defect trapping in the film and that interfacial trapping does not play a significant role. The interesting possibility that positrons might be trapping in the positron well formed by the electronic Schottky barrier cannot account for the observed short diffusion length.