Titanium oxide films on Si(100) deposited by e-beam evaporation

Titanium oxide films with a thickness of a 400 nm were deposited on p-type Si(100) at room temperature by e-beam evaporation, and titanium dioxide was evaporated in oxygen environment at a pressure of 2×10−6–4×10−5 Torr. Effects of oxygen flow rate (FO2) on the properties of the films, such as surface roughness, composition, and chemical states, have been investigated. The root-mean-square surface roughness of the films increased with increasing FO2 up to 20 sccm, and then decreased over 20 sccm. X-ray diffraction patterns show that the titanium oxide films are amorphous. Oxygen resonance backscattering spectroscopy shows that all films are oxygen rich, i.e., relative atomic ratio (CO/CTi) of the films ranged from 2.05 to 2.25. But the x-ray photoelectron spectroscopy (XPS) analysis shows that the titanium oxide films were oxygen deficient. The ratio of oxygen to titanium (CO2/CTi) of the films calculated by XPS ranged from 1.82 to 1.93. XPS shows that there exist only Ti3+ and Ti4+ charge states in the f...