The optoelectronic characterization of the silicon/silicon nitride interface

Abstract The silicon/silicon nitride interface was studied by contactless photoconductivity measurements in the microwave frequency range. Good passivation and antireflection properties of Si 3 N 4 coatings were observed. It is shown that spatially resolved measurements offer a very sensitive tool for the characterization of the lateral thickness distribution of the Si 3 N 4 film. The inversion layer at the p c-Si/Si 3 N 4 interface causes a storage of excess charge carriers that can be observed by time resolved photoconductivity measurements.