Analytical drain current core model for undoped double gate MOS transistor

Pawel Salek,Lidia Lukasiak,A. Jakubowski

Analytical drain current core model for undoped double gate MOS transistor

2012

Pawel Salek
Lidia Lukasiak
A. Jakubowski

A new analytical drain current model is proposed for symmetrical undoped double gate MOS transistors. It contains no fitting parameters and is physically-based.

Keywords:

Logic gate
Metal gate
MOSFET
Computer science
Core model
Transistor
Gate oxide
Electronic engineering
Electrical engineering
Integrated circuit
Electric potential
drain current

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