Photo sensing performance with electro-optically efficient n-Zn1−xMgxO/p-Si heterojunction

Photodetector is one the most intensively investigated opto-electronic devices as it readily converts optical signal into electrical current. Large area heterojunction-based photodetectors have great potential due to efficient light harvesting abilities. Herein, we report the n-Zn1−xMgxO/p-Si heterojunction-based photodetector for detection of 390 nm light. Pulse laser deposition technique has been employed for large area (1 × 1 cm2) and atomically thin film of Zn1−xMgxO ternary alloy on Si substrate. Photodiode has shown obvious current rectifying behaviour with ideality factor of 2.6. Photodetector based on n-Zn1−xMgxO/p-Si heterojunction has shown fast photoswitching action with response time 100 ms. Detector has shown photoresponsivity of 12 µA/W, specific detectivity of 1.1 × 108 Jones and EQE of 4 × 10−3 for 390 nm light.