Spray pyrolized copper indium gallium sulfide abosrober layers for thin film solar cells

In this study, copper indium gallium sulfide (CuIn 1-x Ga x S 2 ) films was deposited on glass substrates using ultrasonic spray pyrolysis technique (USP). The Ga/(In+Ga) molar ratio in the precursor solutions has been tailored to obtain the stoichiometric films. Chalcopyrite structure of the films was confirmed by XRD analysis. High absorption coefficient values have been obtained for all samples. It has been observed that the optimum Ga/(In+Ga) ratio in precursor was 0.5 for the best-performed CuInGaS 2 thin films.