Betavoltaic p--n+-structure simulation

In order to increase the betavoltaic batteries efficiency output characteristics of the p--n+ (n--p+) - structures were simulated. Replacing the p+-n-structures on the p-n+ and n-p+ -structures enables the space-charge expansion to the crystal surface and thus to reduce the recombination loss in the heavy doped p+-layer and improve conversion of betavoltaic elements efficiency.