Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
2003
Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI