Diffusion barrier properties of atomic layer deposited iridium thin films on the Cu/Ir/Si structure

We have investigated diffusion barrier properties of atomic layer deposited iridium (Ir) thin film as a function of thermal treatment temperature. Up to the temperature of 500°C, Ir thin film maintaind its initial stage without penetration of Cu layer into Si through Ir layer. Thermal stability of Ir layer up to 500°C was supported by HR-TEM and XRD measurement results. On the other hand, Ir layer was thermally annealed at 600°C, Cu-silicide was formed and interdiffusion of Cu and Ir was observed.