Power MOS transistor having a SiC drift zone and method of manufacturing a power MOS transistor

A power MOS transistor comprising: - a semiconductor body (100) having a drift region (11) of a first conductivity type, a source region (14) of the first conductivity type and between the source region (14) and the drift region (11) arranged body zone (13) of a second, complementary to the first conductivity type conduction type, - a gate electrode (23) adjacent to the body zone (13) and dielectrically relative to the body zone (13), which is isolated source region (14) and the drift region (11), - the semiconductor body (100), a first semiconductor layer (110) of silicon carbide having (SiC) and a second semiconductor layer (120) made of a semiconductor material having a different band gap than silicon, and - that the body zone (13) and the source region (14) are at least partially disposed in said second semiconductor layer (120) and the drift region (11) at least in sections in the first semiconductor layer (110) is disposed, in which the second semiconductor layer (120) is structured like an island and a plurality of each laterally spaced-apart layer portions ...