A 1.6-μm widely tunable distributed Bragg reflector laser diode based on InGaAs/InGaAsP quantum-wells material

Abstract We demonstrate a widely tunable InGaAs quantum-wells (QWs) distributed Bragg reflector (DBR) laser, in which the DBR section was realized by using butt-jointed InGaAsP ( λ = 1 . 46 μ m ) material. In the device process, we explored an optimal chemical etchant applied in the butt-jointed active–passive integration technology. A wide tuning range of 10.7 nm with 19 consecutive channels is obtained with a single tuning current at room temperature (RT). With the help of the heat sink temperature, the tuning range is expanded to 16 nm. A side mode suppression ratio (SMSR) of higher than 34 dB is obtained for all channels at 5 °C to 45 °C. A six-wavelength laser array that can cover a wavelength tuning range of 41.6 nm at 20 °C with a side mode suppression ratio higher than 37 dB in all channels is demonstrated by varying the grating periods. It is a promising light source for methane or multispecies gas detection.