A Sensitive Vertical Standing Graphene/Silicon Schottky Photodetector to Angle Changes

Graphene-based photodetectors have received widespread attention because of the superior characteristics. However, most of previous research focused on improving the performance of the detector. Herein, an angle-sensitive photodetector, which fabricated via vertically standing layered graphene (VSG) grown on $\mathrm{n}$ -type silicon substrate, is demonstrated. Due to the vertical structure of the VSG, the current change rate can reach up to 188.6% when the incident angle is 55 degree, which demonstrates promising applications for omnidirectional detection.