The optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In at least one embodiment of the optoelectronic semiconductor chip (1) comprises the a semiconductor layer sequence (2) with at least one active layer (3) which is adapted for generating electromagnetic radiation. Further, the optoelectronic semiconductor chip (1) outcoupling structures (4) which are mounted at least indirectly on a radiation passage surface (20) of the semiconductor layer sequence (2). A material of the coupling-out (4) is in this case from a material of the semiconductor layer sequence (2) are different. The refractive indices of the materials of outcoupling (4) and the semiconductor layer sequence (2) differ by not more than 30% from each other. Furthermore have facets (40) of the coupling-out (4) has a total area, which is at least 30% of a surface area of ​​the radiation passage surface (20).