Optimization of NPN ESD Protection Device for Improved Failure Current
2021
This paper presents a high voltage NPN based ESD protection device with a designed PBL under collector region. Experiment on silicon shows it achieves 2.7X failure current improvement compared to structure without PBL. It has a flexible feature of tunable trigger voltage and holding voltage without I t2 degradation.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
0
Citations
NaN
KQI