Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2 superlattices by Zn diffusion

A standard 600 °C closed‐tube Zn diffusion into an unstrained InP/In0.53Ga0.47As superlattice was found to produce new superlattices containing Zn3P2 layers, and in some cases Zn3As2 layers. Crystalline properties and diffusion profiles were examined by transmission electron microscopy and secondary‐ion mass spectrometry. Initial doping of Zn enhances the diffusion of In and Ga and results in a superlattice of uniform In and Ga distribution. Upon further infusion of Zn, Zn3P2 forms selectively in the phosphorus layers and propagates from the surface while maintaining an atomically abrupt Zn3P2/In1−xGaxP interface. Zn3As2 conversion is also observed to occur under sufficiently stringent conditions. Diffusion of P and As was not observed.