STUDY OF THE CARRIER TRANSPORT IN PRESENCE OF BACKSCATTERING IN InAs NANOWIRE BASED MOSFET

The fetching of a single-flux scattering theory of the InAs nanowire based MOSFET has been presented here. The backscattering coefficient has been simulated for 1nm, 5nm and 10nm nanowire radius. The calculations are made for , and nanowire orientations. It has been found out the value of the backscattering coefficient increased as the radius of the nanowire is increased from 1nm to 10nm but the spacing between , and nanowire orientations decreased. The drain current IDsat-(VGS-VT) characteristics of InAs ballistic nanowire (5nm radius) has summarized in detail. The drain current IDsat versus electric field (V/m) characteristics of nonballistic InAs nanowire (5nm radius) MOSFET transistor for different orientations are also cited.