Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2 O 3 /HfO 2 (EOT < 1 nm) for low-power logic applications

This paper reports tri-gate sub-100 nm In 0.53 Ga 0.47 As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of g m, max > 1.5 mS/μm, at V DS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ 0 = 760 cm 2 /V-s and peak v x0 = 1.6×10 7 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.