A novel diode linearizer for SiGe HBT power amplifier

In this paper, a novel diode linearizer to keep the base voltage of SiGe HBT power amplifier (PA) constant in the large-signal region is introduced. The results show that the output P1dB, and power-added efficiency (PAE) are improved by 4.9 dBm and 22.8%, respectively. At an input power of 20 dBm, the gain compression and phase distortion of the linearized PA is 2.1 dB and 1.1°, respectively, compared with 5.0 dB and 20.4° for the conventional PA. Also, the improved ACPR is given.© 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1535–1537, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21681