InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal
2011
Using in situ atomic scale imaging with scanning tunneling microscopy/spectroscopy, a combination of atomic hydrogen dosing, annealing, and trimethyl aluminum dosing is observed to produce an ordered unpinned passivation layer on an air exposed InGaAs(001)-(4 × 2) surface with only monatomic steps. This shows that conventional gate-last semiconductor processing can be employed to fabricate a variety of electronic devices, even on air exposed compound semiconductors.
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