A new pixel sensor for uniformity control in ion implantation
2003
The constantly growing research activities based on ion beams require an increasing precision in the control of the different ion beam parameters, such as beam uniformity and intensity. This paper presents a method of measuring the ion beam profile and intensity simultaneously, not easy with existing systems. The detector built comprises an array of 400 graphite pixels connected to ASIC (application specific integrated circuit) chips, that perform the integration and multiplexing of the charge deposited by the incoming ions into each pixel. The detector has been tested at the Surrey Ion Beam Centre and profiles of an argon beam at energies between 2 and 100 keV have been recorded. Total beam current has been monitored and compared to measurements taken with standard Faraday cups. Effects of secondary electron emission on the detector resolution and beam profile accuracy are discussed.
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