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ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm
ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm
2005
C. Jahan
O. Faynot
Mikael Casse
Romain Ritzenthaler
Laurent Brevard
L. Tosti
X. Garros
C. Vizioz
F. Allain
Anne-Marie Papon
H. Dansas
F. Martin
M. Vinet
B. Guillaumot
A. Toffoli
B. Giffard
S. Deleonibus
Keywords:
Electrical engineering
Engineering
Metal gate
Tin
Transistor
Optoelectronics
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