Dielectric properties of \(\hbox {Ag/Ru}_{0.03}\)–PVA/n-Si structures

\(\hbox {Ag/Ru}_{0.03}{-}\hbox {PVA}\)/n-Si structures were successfully prepared and their morphological and electrical properties were investigated. The obtained electrical results suggested that the complex dielectric constant (\(\varepsilon ^{*}=\varepsilon ^{\prime }-{j\varepsilon ^{\prime \prime }}\)), complex electric modulus \(M^{*}=M^{\prime } + { jM}^{\prime \prime }\), loss tangent (tan \(\delta \)) and alternating current (ac) electrical conductivity (\(\sigma _{\mathrm{ac}})\) are all a strong function of the frequency (f) and applied voltage. The changes in these parameters are the results of the existence of the surface states (\(N_{\mathrm{ss}})\) or interface traps (\(D_{\mathrm{it}} = N_{\mathrm{ss}})\), interfacial polymer layer, surface and dipole polarizations and hopping mechanisms. The values of \(\varepsilon ^{\prime }\) and \(\varepsilon ^{\prime \prime }\) show a steep decline with increasing frequency and then reach a constant value at high frequency, whereas the increments of \(M^{\prime }\) and \(M^{\prime \prime }\) with frequency are exponential. The tan \(\delta \, vs\). log f plot has a strong peak behaviour, especially in the accumulation region. These experimental results suggested that the \(\hbox {Ru}_{0.03}{-}\hbox {PVA}\) interfacial layer could be used as a high dielectric material instead of conventional materials.