Old Web
English
Sign In
Acemap
>
Paper
>
Characterization of Metal Schottky Junction for In0.53Ga0.47As Substrates
Characterization of Metal Schottky Junction for In0.53Ga0.47As Substrates
2012
Ryuji Hosoi
Yuya Suzuki
Darius Zadeh
Kuniyuki Kakushima
Parhat Ahmet
Yoshinori Kataoka
Akira Nishiyama
Nobuyuki Sugii
Kazuo Tsutsui
Kenji Natori
Takeo Hattori
Hiroshi Iwai
Keywords:
Schottky barrier
Condensed matter physics
Metal–semiconductor junction
Electrical junction
Metal
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]