Novel LTPS technology for large substrate

— We developed partial laser anneal silicon (PLAS) thin-film transistor (TFT) of novel low-temperature polycrystalline-silicon (LTPS) technology, which had the mobility of 28.1 cm2/Vs lager than that of mass produced oxide TFT and photo-stability comparable with that of LTPS TFT in bottom gate structure. This innovative technology enables the conversion from an α-Si TFT to a high-mobility TFT most easily and inexpensively. Moreover, there is no limit of substrate size, such as Gen10 and more. Photo-stability of PLAS will be suitable to organic light-emitting diode backplane, high-dynamic range TV, and outdoor IDP.