Method of forming a processing method and a silicon nitride film of the silicon nitride film

PROBLEM TO BE SOLVED: To provide a method for treating a silicon nitride film capable of modifying film quality so as to have desired characteristics even for a silicon nitride film formed by CVD at low temperature.SOLUTION: A method for treating a silicon nitride film formed on a substrate by plasma CVD includes: irradiating a silicon nitride film with microwave hydrogen plasma; removing hydrogen at a surface portion of the silicon nitride film by atomic hydrogen in the microwave plasma to modify the portion of the film.SELECTED DRAWING: Figure 1