Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 1014, 1015 and 1016 protons/cm2 is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 1015 protons/cm2 the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.